FCP190N65F
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FCP190N65F is warrantied and traceable.| Part Number | FCP190N65F |
|---|---|
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | MOSFET N-CH 650V 20.6A TO220-3 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Datasheets | FCP190N65F |
| Vgs(th) (Max) @ Id | 5V @ 2mA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-220-3 |
| Series | FRFET®, SuperFET® II |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 10A, 10V |
| Power Dissipation (Max) | 208W (Tc) |
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 3225pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 78nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 650V |
| Detailed Description | N-Channel 650V 20.6A (Tc) 208W (Tc) Through Hole TO-220-3 |
| Current - Continuous Drain (Id) @ 25°C | 20.6A (Tc) |
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