FDD10AN06A0

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Part Number FDD10AN06A0
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 60V 50A D-PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Datasheets FDD10AN06A0
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-252AA
Series PowerTrench®
Rds On (Max) @ Id, Vgs 10.5 mOhm @ 50A, 10V
Power Dissipation (Max) 135W (Tc)
Packaging Tape & Reel (TR)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names FDD10AN06A0-ND
FDD10AN06A0TR
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 16 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1840pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Drain to Source Voltage (Vdss) 60V
Detailed Description N-Channel 60V 11A (Ta), 50A (Tc) 135W (Tc) Surface Mount TO-252AA
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 50A (Tc)
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US$ 0.814

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