SI2312BDS-T1-E3

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Part Number SI2312BDS-T1-E3
Manufacturer Electro-Films (EFI) / Vishay
Description MOSFET N-CH 20V 3.9A SOT23-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Datasheets Si2312BDS
Vgs(th) (Max) @ Id 850mV @ 250µA
Vgs (Max) ±8V
Technology MOSFET (Metal Oxide)
Supplier Device Package SOT-23-3 (TO-236)
Series TrenchFET®
Rds On (Max) @ Id, Vgs 31 mOhm @ 5A, 4.5V
Power Dissipation (Max) 750mW (Ta)
Packaging Tape & Reel (TR)
Package / Case TO-236-3, SC-59, SOT-23-3
Other Names SI2312BDS-T1-E3TR
SI2312BDST1E3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 33 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Drain to Source Voltage (Vdss) 20V
Detailed Description N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C 3.9A (Ta)
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