NAND512R3A2SN6E

NAND512R3A2SN6E

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Part Number NAND512R3A2SN6E
Manufacturer Micron Technology
Description IC FLASH 512M PARALLEL 48TSOP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Datasheets NAND512(R,W)(3,4)A2S
Write Cycle Time - Word, Page 50ns
Voltage - Supply 1.7 V ~ 1.95 V
Technology FLASH - NAND
Supplier Device Package 48-TSOP
Series -
Packaging Tray
Package / Case 48-TFSOP (0.724", 18.40mm Width)
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Memory Type Non-Volatile
Memory Size 512Mb (64M x 8)
Memory Interface Parallel
Memory Format FLASH
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description FLASH - NAND Memory IC 512Mb (64M x 8) Parallel 50ns 48-TSOP
Access Time 50ns

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