JAN1N5809US

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Part Number JAN1N5809US
Manufacturer Microsemi
Description DIODE GEN PURP 100V 6A B-MELF
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Datasheets 1N5807,09,11 US/URS
Voltage - Forward (Vf) (Max) @ If 875mV @ 4A
Voltage - DC Reverse (Vr) (Max) 100V
Supplier Device Package B, SQ-MELF
Speed Fast Recovery = 200mA (Io)
Series Military, MIL-PRF-19500/477
Reverse Recovery Time (trr) 30ns
Packaging Bulk
Package / Case SQ-MELF, B
Other Names 1086-2125
1086-2125-MIL
Operating Temperature - Junction -65°C ~ 175°C
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 8 Weeks
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Diode Type Standard
Detailed Description Diode Standard 100V 6A Surface Mount B, SQ-MELF
Current - Reverse Leakage @ Vr 5µA @ 100V
Current - Average Rectified (Io) 6A
Capacitance @ Vr, F 60pF @ 10V, 1MHz
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US$ 10.528
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