MJ11032G
| Part Number | MJ11032G |
|---|---|
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | TRANS NPN DARL 120V 50A TO3 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Datasheets | MJ11028,29,30,32,33 |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Vce Saturation (Max) @ Ib, Ic | 3.5V @ 500mA, 50A |
| Transistor Type | NPN - Darlington |
| Supplier Device Package | TO-3 |
| Series | - |
| Power - Max | 300W |
| Packaging | Tray |
| Package / Case | TO-204AE |
| Other Names | MJ11032GOS |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 23 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Frequency - Transition | - |
| Detailed Description | Bipolar (BJT) Transistor NPN - Darlington 120V 50A 300W Through Hole TO-3 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 25A, 5V |
| Current - Collector Cutoff (Max) | 2mA |
| Current - Collector (Ic) (Max) | 50A |
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